Anomalous Photovoltaic Response of Graphene-on-GaN Schottky Photodiodes
- Title
- Anomalous Photovoltaic Response of Graphene-on-GaN Schottky Photodiodes
- Author
- 박원일
- Keywords
- GaN-graphene Schottky junction; UV photodetector; photovoltaic/photoelectric response; gas desorption; photocurrent; internal photoemission; photocarrier dynamics; molecular interaction
- Issue Date
- 2018-04
- Publisher
- AMER CHEMICAL SOC
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v. 10, no. 16, page. 14170-14174
- Abstract
- Graphene has attracted great attention as an alternative to conventional metallic or transparent conducting electrodes. Despite its similarities with conventional electrodes, recent studies have shown that a single-atom layer of graphene possesses unique characteristics, such as a tunable work function and transparencies for electric potential, reactivity, and wetting. Nevertheless, a systematic analysis of graphene and semiconductor junction characteristics has not yet been carried out. Here, we report the photoresponse characteristics of graphene-on-GaN Schottky junction photodiodes (Gr-GaN-SJPDs), showing a typical rectifying behavior and distinct photovoltaic and photoelectric responses. Following the initial abrupt response to UV illumination, the Gr-GaN-SJPDs exhibited a distinct difference in photocarrier dynamics depending on the applied bias voltage, which is characterized by either a negative or positive change in photocurrent with time. We propose underlying mechanisms for the anomalous photocarrier dynamics based on the interplay between electrostatic molecular interactions over the one-atom-thick graphene and GaN junction and trapped photocarriers at the defect states in the GaN thin film.
- URI
- https://pubs.acs.org/doi/10.1021/acsami.8b02043https://repository.hanyang.ac.kr/handle/20.500.11754/118357
- ISSN
- 1944-8244; 1944-8252
- DOI
- 10.1021/acsami.8b02043
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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