Investigation of ramped voltage stress to screen defective magnetic tunnel junctions
- Title
- Investigation of ramped voltage stress to screen defective magnetic tunnel junctions
- Author
- 송윤흡
- Keywords
- reliability; magnetic memory; device reliability
- Issue Date
- 2018-01
- Publisher
- IOP PUBLISHING LTD
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v. 33, no. 1, Article no. 015006
- Abstract
- A ramped voltage stress (RVS) method to screen defective magnetic tunnel junctions (MTJs) is investigated in order to improve screen accuracy and shorten test time. Approximately 1500 MTJs with 1.25 nm thick tunnel barriers were fabricated for this evaluation, and normal MTJs show a 189% tunnel magnetoresistance ratio, a 365 Omega m(2) resistance-area product, and a 1.8 V breakdown voltage, which is enough for applying reliable screen tests. We successfully classified MTJs as normal MTJs having good characteristics or defective MTJs having insufficient endurance and showing resistance degradation after only short-term cycling. Using the RVS screen test with low ramp speed, it is demonstrated that remarkable screening performance and little dependence on temperature are obtained for short test time.
- URI
- https://iopscience.iop.org/article/10.1088/1361-6641/aa99bbhttps://repository.hanyang.ac.kr/handle/20.500.11754/117227
- ISSN
- 0268-1242; 1361-6641
- DOI
- 10.1088/1361-6641/aa99bb
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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