Enhancements of the memory margin and the stability of an organic bistable device due to a graphene oxide:mica nanocomposite sandwiched between two polymer (9-vinylcarbazole) buffer layers
- Title
- Enhancements of the memory margin and the stability of an organic bistable device due to a graphene oxide:mica nanocomposite sandwiched between two polymer (9-vinylcarbazole) buffer layers
- Author
- 김현우
- Keywords
- Graphene oxide; Mica; PVK; Nanocomposite; Organic bistable device
- Issue Date
- 2018-01
- Publisher
- ELSEVIER SCIENCE BV
- Citation
- APPLIED SURFACE SCIENCE, v. 429, page. 231-236
- Abstract
- Current-voltage (I-V) curves for the Al/polymer (9-vinylcarbazole) (PVK)/graphene oxide (GO):mica/PVK/indium-tin oxide (ITO) devices at 300K showed a current bistability with a maximum high conductivity (ON)/low conductivity (OFF) ratio of 2 x 10(4), which was approximately 10 times larger than that of the device without a PVK layer. The endurance number of ON/OFF switchings for the Al/PVK/GO:mica/PVK/ITO device was 1 x 10(2) cycles, which was 20 times larger than that for the Al/GO:mica/ITO device. The "erase" voltages were distributed between 2.3 and 3V, and the "write" voltages were distributed between -1.2 and -0.5 V. The retention time for the Al/PVK/GO:mica/PVK/ITO device was above 1 x 10(4) s, indicative of the memory stability of the device. The carrier transport mechanisms occurring in the Al/PVK/GO:mica/PVK/ITO and the Al/GO:mica/ITO devices are described on the basis of the I-V results and the energy band diagrams. (C) 2017 Elsevier B.V. All rights reserved.
- URI
- https://www.sciencedirect.com/science/article/pii/S0169433217324522?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/116934
- ISSN
- 0169-4332; 1873-5584
- DOI
- 10.1016/j.apsusc.2017.08.105
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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