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The Advent of Indium Selenide: Synthesis, Electronic Properties, Ambient Stability and Applications

Title
The Advent of Indium Selenide: Synthesis, Electronic Properties, Ambient Stability and Applications
Author
Bukhvalov Danil
Keywords
indium selenide; exfoliation; Bridgman-Stockbarger growth; chemical reactivity; angle-resolved photoemission spectroscopy; nanodevices
Issue Date
2017-12
Publisher
MDPI AG
Citation
NANOMATERIALS, v. 7, no. 11, Article no. 372
Abstract
Among the various two-dimensional semiconductors, indium selenide has recently triggered the interest of scientific community, due to its band gap matching the visible region of the electromagnetic spectrum, with subsequent potential applications in optoelectronics and especially in photodetection. In this feature article, we discuss the main issues in the synthesis, the ambient stability and the application capabilities of this novel class of two-dimensional semiconductors, by evidencing open challenges and pitfalls. In particular, we evidence how the growth of single crystals with reduced amount of Se vacancies is crucial in the road map for the exploitation of indium selenide in technology through ambient-stable nanodevices with outstanding values of both mobility of charge carriers and ON/OFF ratio. The surface chemical reactivity of the InSe surface, as well as applications in the fields of broadband photodetection, flexible electronics and solar energy conversion are also discussed.
URI
https://www.mdpi.com/2079-4991/7/11/372https://repository.hanyang.ac.kr/handle/20.500.11754/116639
ISSN
2079-4991
DOI
10.3390/nano7110372
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > CHEMISTRY(화학과) > Articles
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