Performance Improvement of p-Channel Tin Monoxide Transistors with a Solution-Processed Zirconium Oxide Gate Dielectric

Abstract

This letter reports the fabrication of p-channel tin monoxide (SnO) thin-film transistors (TFTs) with a highpermittivity zirconiumoxide (ZrO2) gate insulatorfilm, which were prepared by a low-cost spin-cast method. The spincast ZrO2 dielectrics exhibit a low leakage current density of 4.5x10(-8) A/cm(2) at 1 MV/cm. Introducing the ZrO2 dielectric in top-typeSnOTFTs allows for a reduction in the driving gate voltage range from 80 to 10 V, ascomparedwith devices with a thermal SiO2 gate insulator. Additionally, a high fieldeffect mobility of 2.5 cm(2)/Vs and an ION/OFF of 3 x10(3) were preserved.