Achieving High Carrier Mobility Exceeding 70 cm(2)/Vs in Amorphous Zinc Tin Oxide Thin-Film Transistors
- Title
- Achieving High Carrier Mobility Exceeding 70 cm(2)/Vs in Amorphous Zinc Tin Oxide Thin-Film Transistors
- Author
- 정재경
- Keywords
- zinc tin oxide (ZTO); metal capping; mobility; oxygen-related defect; thin-film transistors (TFTs)
- Issue Date
- 2017-09
- Publisher
- KOREAN INST METALS MATERIALS
- Citation
- ELECTRONIC MATERIALS LETTERS, v. 13, no. 5, page. 406-411
- Abstract
- This paper proposes a new defect engineering concept for low-cost In-and Ga-free zinc tin oxide (ZTO) thin-film transistors (TFTs). This concept is comprised of capping ZTO films with tantalum (Ta) and a subsequent modest thermal annealing treatment at 200 degrees C. The Ta-capped ZTO TFTs exhibited a remarkably high carrier mobility of 70.8 cm(2)/Vs, low subthreshold gate swing of 0.18 V/decade, threshold voltage of -1.3 V, and excellent I-ON/OFF ratio of 2 x 10(8). The improvement (> two-fold) in the carrier mobility compared to the uncapped ZTO TFT can be attributed to the effective reduction of the number of adverse tailing trap states, such as hydroxyl groups or oxygen interstitial defects, which stems from the scavenging effect of the Ta capping layer on the ZTO channel layer. Furthermore, the Ta-capped ZTO TFTs showed excellent positive and negative gate bias stress stabilities.
- URI
- https://link.springer.com/article/10.1007%2Fs13391-017-1613-2https://repository.hanyang.ac.kr/handle/20.500.11754/115577
- ISSN
- 1738-8090; 2093-6788
- DOI
- 10.1007/s13391-017-1613-2
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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