Crystal characteristics of bulk GaN single crystal grown by HVPE method with the increase of thickness
- Title
- Crystal characteristics of bulk GaN single crystal grown by HVPE method with the increase of thickness
- Author
- 심광보
- Keywords
- HVPE; bulk GaN; dislocation; residual thermal strain; radius curvature
- Issue Date
- 2017-02
- Publisher
- KOREAN ASSOC CRYSTAL GROWTH
- Citation
- JOURNAL OF CERAMIC PROCESSING RESEARCH, v. 18, no. 2, page. 93-97
- Abstract
- Although GaN has been used in optical materials and power devices, the extent of its application is determined by the crystal quality. Bulk GaN has been reported to produce high-quality GaN. Therefore, it can be used in applications that require high-quality crystals, such as high-brightness light-emitting diode, power devices, etc. We grew a 2-inch bulk GaN crystal, using the hydride vapor phase epitaxy (HVPE) method, on a sapphire substrate to a thickness of similar to 5 mm. X-ray diffraction (XRD) was used to analyze the structure of GaN. Scanning electron microscopy (SEM) was used to measure the etch pits density (EPD) of GaN after wet chemical etching. In addition, high-resolution XRD (HR-XRD) and Raman spectrometry were employed for radius of curvature and residual strains measurements, respectively.
- URI
- https://www.kci.go.kr/kciportal/ci/sereArticleSearch/ciSereArtiView.kci?sereArticleSearchBean.artiId=ART002326715https://repository.hanyang.ac.kr/handle/20.500.11754/112573
- ISSN
- 1229-9162
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
- Files in This Item:
- Crystal characteristics of bulk GaN single crystal grown by HVPE method with the increase of thickness.pdfDownload
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