Growth of rutile-TiO2 thin films via Sn doping and insertion of ultra-thin SnO2 interlayer by atomic layer deposition
- Title
- Growth of rutile-TiO2 thin films via Sn doping and insertion of ultra-thin SnO2 interlayer by atomic layer deposition
- Author
- 안지훈
- Keywords
- Titanium dioxide; Tin dioxide; Rutile structure; Dynamic random-access memory capacitor; Atomic layer deposition
- Issue Date
- 2019-07
- Publisher
- ELSEVIER SCIENCE BV
- Citation
- MATERIALS LETTERS, v. 246, Page. 1-4
- Abstract
- Rutile-TiO2 thin films have potential for use in high-k applications, such as dynamic random-access memory capacitors; however, they are difficult to realize without using noble-metal-based oxide substrates. Therefore, we proposed a new approach for the preparation of rutile TiO2 by a small amount of Sn doping and the insertion of ultra-thin SnO2 to achieve enhanced dielectric performance without using noble-metal-based electrodes. It was confirmed that the crystallinity of rutile TiO2 was remarkably enhanced in Sn-doped TiO2 formed on an ultra-thin SnO2 interlayer. Moreover, 10 nm-thick Sn-doped TiO2 thin film on a 1-nm SnO2 interlayer exhibited a high dielectric constant of about 80. (C) 2019 Elsevier B.V. All rights reserved.
- URI
- https://www.sciencedirect.com/science/article/pii/S0167577X19303908https://repository.hanyang.ac.kr/handle/20.500.11754/112555
- ISSN
- 0167-577X; 1873-4979
- DOI
- 10.1016/j.matlet.2019.03.018
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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