Comparative study of the electrical characteristics of ALD‐ZnO thin films using H2O and H2O2 as the oxidants
- Title
- Comparative study of the electrical characteristics of ALD‐ZnO thin films using H2O and H2O2 as the oxidants
- Author
- 안지훈
- Keywords
- atomic layer deposition; thin films; zinc oxide
- Issue Date
- 2019-03
- Publisher
- WILEY
- Citation
- JOURNAL OF THE AMERICAN CERAMIC SOCIETY, v. 102, No. 10, Page. 5881-5889
- Abstract
- ZnO thin films were deposited via atomic layer deposition (ALD) using H2O and H2O2 as oxidants with substrate temperatures from 100 degrees C to 200 degrees C. The ZnO films deposited using H2O2 (H2O2-ZnO) showed lower growth rates than those deposited with H2O (H2O-ZnO) at these temperature range due to the lower vapor pressure of H2O2, which produces fewer OH- functional groups; the H2O2-ZnO films exhibited higher electrical resistivities than the H2O-ZnO films. The selection of H2O2 or H2O as oxidants was revealed to be very important for controlling the electrical properties of ALD-ZnO thin films, as it affected the film crystallinity and number of defects. Compared to H2O-ZnO, H2O2-ZnO exhibited poor crystallinity within a growth temperature range of 100-200 degrees C, while H2O2-ZnO showed a strong (002) peak intensity. Photoluminescence showed that H2O2-ZnO had more interstitial oxygen and fewer oxygen vacancies than H2O-ZnO. Finally, both kinds of ZnO thin films were prepared as transparent resistive oxide layers for CIGS solar cells and were evaluated.
- URI
- https://ceramics.onlinelibrary.wiley.com/doi/full/10.1111/jace.16429https://repository.hanyang.ac.kr/handle/20.500.11754/112536
- ISSN
- 0002-7820; 1551-2916
- DOI
- 10.1111/jace.16429
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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