Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 안지훈 | - |
dc.date.accessioned | 2019-11-20T05:04:45Z | - |
dc.date.available | 2019-11-20T05:04:45Z | - |
dc.date.issued | 2019-03 | - |
dc.identifier.citation | JOURNAL OF THE AMERICAN CERAMIC SOCIETY, v. 102, No. 10, Page. 5881-5889 | en_US |
dc.identifier.issn | 0002-7820 | - |
dc.identifier.issn | 1551-2916 | - |
dc.identifier.uri | https://ceramics.onlinelibrary.wiley.com/doi/full/10.1111/jace.16429 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/112536 | - |
dc.description.abstract | ZnO thin films were deposited via atomic layer deposition (ALD) using H2O and H2O2 as oxidants with substrate temperatures from 100 degrees C to 200 degrees C. The ZnO films deposited using H2O2 (H2O2-ZnO) showed lower growth rates than those deposited with H2O (H2O-ZnO) at these temperature range due to the lower vapor pressure of H2O2, which produces fewer OH- functional groups; the H2O2-ZnO films exhibited higher electrical resistivities than the H2O-ZnO films. The selection of H2O2 or H2O as oxidants was revealed to be very important for controlling the electrical properties of ALD-ZnO thin films, as it affected the film crystallinity and number of defects. Compared to H2O-ZnO, H2O2-ZnO exhibited poor crystallinity within a growth temperature range of 100-200 degrees C, while H2O2-ZnO showed a strong (002) peak intensity. Photoluminescence showed that H2O2-ZnO had more interstitial oxygen and fewer oxygen vacancies than H2O-ZnO. Finally, both kinds of ZnO thin films were prepared as transparent resistive oxide layers for CIGS solar cells and were evaluated. | en_US |
dc.description.sponsorship | Global Frontier R&D Program (2013-073298) on Center for Hybrid Interface Materials (HIM) funded by the Ministry of Science, ICT & Future Planning, Grant/Award Number: 2013-073298; | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | WILEY | en_US |
dc.subject | atomic layer deposition | en_US |
dc.subject | thin films | en_US |
dc.subject | zinc oxide | en_US |
dc.title | Comparative study of the electrical characteristics of ALD‐ZnO thin films using H2O and H2O2 as the oxidants | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1111/jace.16429 | - |
dc.relation.journal | JOURNAL OF THE AMERICAN CERAMIC SOCIETY | - |
dc.contributor.googleauthor | Lee, Woo-Jae | - |
dc.contributor.googleauthor | Bera, Susanta | - |
dc.contributor.googleauthor | Wan, Zhixin | - |
dc.contributor.googleauthor | Dai, Wei | - |
dc.contributor.googleauthor | Bae, Jong-Seong | - |
dc.contributor.googleauthor | Hong, Tae Eun | - |
dc.contributor.googleauthor | Kim, Kwang-Ho | - |
dc.contributor.googleauthor | Ahn, Ji-Hoon | - |
dc.contributor.googleauthor | Kwon, Se-Hun | - |
dc.relation.code | 2019002679 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING | - |
dc.identifier.pid | ajh1820 | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.