Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 최창환 | - |
dc.date.accessioned | 2019-10-11T01:40:06Z | - |
dc.date.available | 2019-10-11T01:40:06Z | - |
dc.date.issued | 2019-01 | - |
dc.identifier.citation | NPG ASIA MATERIALS, v. 11, no. 5 | en_US |
dc.identifier.issn | 1884-4049 | - |
dc.identifier.issn | 1884-4057 | - |
dc.identifier.uri | https://www.nature.com/articles/s41427-018-0105-7 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/110976 | - |
dc.description.abstract | We demonstrate inherent biorealistic synaptic plasticity functions in the Pt/n-ZnO/SiO2-x/Pt heterostructures, where the n-ZnO semiconductor is geometrically cone-shaped in the size of a few nanometers. The synaptic functions were achieved within a two-terminal, electroforming-free, and low-power rectifying diode-like resistive switching device. The important rate-dependent synaptic functions, such as the nonlinear transient conduction behavior, short-and long-term plasticity, paired-pulse facilitation, spike-rate-dependent plasticity and sliding threshold effect, were investigated in a single device. These characteristics closely mimic the memory and learning functions of those in biosynapses, where frequency-dependent identical spiking operations are mostly taking place, and we emulate these characteristics in the "Learning-Forgetting-Relearning" synaptic behavior. The switching dynamics in the cone-shaped n-ZnO semiconductor are correlated with the transport mechanism along the grain boundaries of the charged ion species, namely, oxygen vacancies and charged oxygen. The diffusion and generation/recombination of these defects have specific time scales of self-decay by virtue of the asymmetric profile of the n-ZnO cone defects. Finally, the essential biorealistic synaptic plasticity functions were discovered for the perspectives of dynamic/adaptive electronic synapse implementations in hardware-based neuromorphic computing. | en_US |
dc.description.sponsorship | This research was supported by the Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of science, ICT & Future Planning (NRF-2016M3A7B4910426) as well as by the Future Semiconductor Device Technology Development Program (10080689) funded by MKE/KEIT. We thank Dr. Gul Hassan for helping with the humidity measurement test. | en_US |
dc.language.iso | en | en_US |
dc.publisher | NATURE PUBLISHING GROUP | en_US |
dc.subject | LONG-TERM POTENTIATION | en_US |
dc.subject | PLASTICITY | en_US |
dc.subject | MODEL | en_US |
dc.subject | CIRCUITS | en_US |
dc.subject | MEMORY | en_US |
dc.title | Bio-realistic synaptic characteristics in the cone-shaped ZnO memristive device | en_US |
dc.type | Article | en_US |
dc.relation.volume | 11 | - |
dc.identifier.doi | 10.1038/s41427-018-0105-7 | - |
dc.relation.page | 5-20 | - |
dc.relation.journal | NPG ASIA MATERIALS | - |
dc.contributor.googleauthor | Sokolov, Andrey Sergeevich | - |
dc.contributor.googleauthor | Jeon, Yu-Rim | - |
dc.contributor.googleauthor | Kim, Sohyeon | - |
dc.contributor.googleauthor | Ku, Boncheol | - |
dc.contributor.googleauthor | Choi, Changhwan | - |
dc.relation.code | 2019042094 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | cchoi | - |
dc.identifier.orcid | https://orcid.org/0000-0002-8386-3885 | - |
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