Reduction in the Mask Error Factor by Optimizing the Diffraction Order of a Scattering Bar in Lithography

Abstract

This paper searches for the scattering bar behavior and the extent of mask bias that may reduce the aerial image errors by reducing the mask error factor (MEF) for isolated and dense patterns. The merit of using scattering bars at the mask for the optical proximity correction (OPC) is examined for a potential reduction in the MEF by optimizing the 0(th) diffraction order. A MEF minimization through the use of an isolated-dense bias and optimum placement of a scattering bar with the different pitches can increase the common process latitude and can decrease the minimum feature size.