Ohmic Contacts of Pd/Zn/M(=Pd of Pt)/Au to p-Type InP
- Title
- Ohmic Contacts of Pd/Zn/M(=Pd of Pt)/Au to p-Type InP
- Author
- 어영선
- Issue Date
- 2005-04
- Publisher
- KOREAN PHYSICAL SOC
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 46, No. 4, Page. 751-755
- Abstract
- We have investigated the ohmic properties of Au/M(= Pd or Pt)/Zn/Pd/p-InP, focusing on the role of the third metal M in Au-free metallization. Both the lowest specific contact resistivity of 7 x 10(-6) Omega(.)cm(2) and a flat diffusion front were obtained for a sample with a Au/Pt/Zn/Pd/p-InP contact material after annealing at 400 degrees C for 4 min, indicating that the Pt layer was more effective than the Pd layer in preventing Zn out-diffusion during the annealing process. In addition to Au-free metallizations, we fabricated the Au-based metallization of Au/Cr/AuZn/Au/p-lnP in order to justify our ohmic contact process, and we compared its ohmic characteristics.
- URI
- http://www.jkps.or.kr/journal/view.html?uid=6912&vmd=Fullhttps://repository.hanyang.ac.kr/handle/20.500.11754/110413
- ISSN
- 0374-4884; 1976-8524
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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