Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 강보수 | - |
dc.date.accessioned | 2019-09-03T04:48:35Z | - |
dc.date.available | 2019-09-03T04:48:35Z | - |
dc.date.issued | 2005-01 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v. 86, No. 2, Article no. 022903 | en_US |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.issn | 1077-3118 | - |
dc.identifier.uri | https://aip.scitation.org/doi/abs/10.1063/1.1843285 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/110121 | - |
dc.description.abstract | We investigated the retention characteristics of (Bi,La)(4)Ti3O12 (BLT) capacitors and their lateral size effects in a fully integrated device structure. Unlike the commonly used Pb(Zr,Ti)O-3 capacitors for ferroelectric random access memories (FeRAMs), which have poor opposite-state retention characteristics, BLT capacitors showed very stable characteristics in both the same- and the opposite-state retention tests. These good retention properties were closely related to the small amount of imprint in the BLT capacitors. In addition, the retention characteristics of BLT capacitors showed no practical degradation due to the size reduction, down to 0.49x0.64 mum(2), which could be used for highly integrated FeRAMs of 32 MB density. (C) 2005 American Institute of Physics. | en_US |
dc.description.sponsorship | This work was financially supported by the Korean Ministry of Science and Technology through the Creative Research Initiative Program and by the System IC 2010 Project of the Korean Government. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | AMER INST PHYSICS | en_US |
dc.title | Retention properties of fully integrated (Bi,La)4Ti3O12 capacitors and their lateral size effects | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.1843285 | - |
dc.relation.journal | APPLIED PHYSICS LETTERS | - |
dc.contributor.googleauthor | Kim, D.J. | - |
dc.contributor.googleauthor | Jo, J.Y. | - |
dc.contributor.googleauthor | So, Y.W. | - |
dc.contributor.googleauthor | Kang, B.S. | - |
dc.contributor.googleauthor | Noh, T.W. | - |
dc.contributor.googleauthor | Yoon, J.-G. | - |
dc.contributor.googleauthor | Song, T.K. | - |
dc.contributor.googleauthor | Noh, K.H. | - |
dc.contributor.googleauthor | Lee, S.-S. | - |
dc.contributor.googleauthor | Oh, S.-H. | - |
dc.contributor.googleauthor | Lee, K.-N. | - |
dc.contributor.googleauthor | Hong, S.-K. | - |
dc.contributor.googleauthor | Park, Y.-J. | - |
dc.relation.code | 2007200866 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF APPLIED PHYSICS | - |
dc.identifier.pid | bosookang | - |
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