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dc.contributor.author오혜근-
dc.date.accessioned2019-07-19T01:45:09Z-
dc.date.available2019-07-19T01:45:09Z-
dc.date.issued2006-02-
dc.identifier.citationProceedings of SPIE - The International Society for Optical Engineering; SPIE 31st International Symposium on Advanced Lithography, v. 6154, Article no. 61542Ren_US
dc.identifier.issn0277-786X-
dc.identifier.urihttps://www.spiedigitallibrary.org/conference-proceedings-of-spie/6154/61542R/Evaluation-of-partial-coherent-imaging-using-the-transfer-function-in/10.1117/12.656983.full-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/107666-
dc.description.abstractThe desired minimum feature size is decreasing for the future technology nodes. Immersion lithography has been actively pursued as a method of extending the resolution of optical lithography beyond 65 nm mode. Immersion lithography and hyper NA impact the selection and optimization of the various resolution enhancement techniques (RET). These can be selected as appropriate for each mask pattern. As the line width on target is narrower, the fine-line structure will no longer be discernible. Then this is the resolution limit of the system. Until recent times, the traditional means of determining the quality of an optical element or system of elements was to evaluate its limit of resolution. A useful parameter in evaluating the performance of a system is the modulation transfer function and this is analyzed for the hyper NA immersion lithography.en_US
dc.language.isoen_USen_US
dc.publisherSPIEen_US
dc.subjectHyper NAen_US
dc.subjectImmersion lithographyen_US
dc.subjectModulation transfer function (MTF)en_US
dc.subjectPartial coherenten_US
dc.subjectTransmission cross-coefficient (TCC)en_US
dc.titleEvaluation of partial coherent imaging using the transfer function in immersion lithographyen_US
dc.typeArticleen_US
dc.identifier.doi10.1117/12.656983-
dc.contributor.googleauthorJung, M.-R.-
dc.contributor.googleauthorKwak, E.-A.-
dc.contributor.googleauthorOh, H.-K.-
dc.contributor.googleauthorShim, S.-B.-
dc.contributor.googleauthorChoi, N.-R.-
dc.contributor.googleauthorKim, J.-S.-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF APPLIED PHYSICS-
dc.identifier.pidhyekeun-
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