Effect of waveguide structure for suppression of ripples in the far-field pattern of a 405-nm InGaN-GaN Laser Diode
- Title
- Effect of waveguide structure for suppression of ripples in the far-field pattern of a 405-nm InGaN-GaN Laser Diode
- Author
- 유경렬
- Keywords
- GaN-based laser; Far field pattern; Ripple; Waveguide layer
- Issue Date
- 2007-08
- Publisher
- KOREAN PHYSICAL SOC
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 51, No. 2, Page. 488-492
- Abstract
- This paper investigates the impact of the waveguide structure on ripples in the far-field pattern of a laser diode, 405-nm In0.08Ga0.92N/In0.015Ga0.085N grown on a sapphire substrate. The leakage of the transverse mode to an n-GaN buffer layer is found to induce ripples in the far field patterns perpendicular to the junction plane. We numerically computed the far-field patterns and the optical confinement factor of n-GaN waveguide layers of various thicknesses. An optimal thickness of the layer was derived from the numerical simulation, with a minor modification through measurements. Experiments showed remarkably smooth far-field patterns with a minimum ripple ratio of 4.2 % are attainable using the proposed thicknesses of the n-Al0.08Ga0.92N/GaN cladding and the n-GaN waveguide layers.
- URI
- http://www.jkps.or.kr/journal/view.html?volume=51&number=2&spage=488&year=2007https://repository.hanyang.ac.kr/handle/20.500.11754/106818
- ISSN
- 0374-4884
- DOI
- 10.3938/jkps.51.488
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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