Strain relaxation in sol-gel grown epitaxial anatase thin films
- Title
- Strain relaxation in sol-gel grown epitaxial anatase thin films
- Author
- 강보수
- Keywords
- TIO2 FILMS; LOW-COST; LAALO3; SUBSTRATE; MICROSTRUCTURE; MICROSCOPY; INTERFACES; DEPOSITION; STRESS; OXIDES
- Issue Date
- 2008-03
- Publisher
- AMER CHEMICAL SOC
- Citation
- JOURNAL OF PHYSICAL CHEMISTRY C, v. 112, No. 11, Page. 4205-4208
- Abstract
- Anatase TiO2 thin films on LaAlO3 (LAO) substrates were epitaxially grown at a temperature as low as 350 degrees C using a simple sol-gel process. X-ray diffraction and high-resolution transmission electron microscopy showed that the anatase films have the epitaxial relationship of (001)(TiO2)parallel to(001)(LaAlO3). While the low-temperature growth of the anatase film yielded a residual strain, subsequent annealing at higher temperatures can remove the strain and recover the lattice parameters of a perfect anatase crystal. Measurements of the oxygen content in the anatase films by non-Rutherford elastic resonance scattering analysis suggest that the strain relaxation during higher temperature annealing is due to the incorporation of oxygen and the concomitant annihilation of oxygen vacancies.
- URI
- https://pubs.acs.org/doi/abs/10.1021/jp076194nhttps://repository.hanyang.ac.kr/handle/20.500.11754/104386
- ISSN
- 1932-7447
- DOI
- 10.1021/jp076194n
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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