Contact Resistance and Leakage Current of GaN Devices with Annealed Ti/Al/Mo/Au Ohmic Contacts
- Title
- Contact Resistance and Leakage Current of GaN Devices with Annealed Ti/Al/Mo/Au Ohmic Contacts
- Author
- 박태주
- Keywords
- GaN; AlGaN; Schottky barrier diode; breakdown voltage; annealing; ELECTRON-MOBILITY TRANSISTORS
- Issue Date
- 2016-04
- Publisher
- 대한전자공학회
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v. 16, No. 2, Page. 179-184
- Abstract
- In recent years, the on-resistance, power loss and cell density of Si power devices have not exhibited significant improvements, and performance is approaching the material limits. GaN is considered an attractive material for future high-power applications because of the wide band-gap, large breakdown field, high electron mobility, high switching speed and low on-resistance. Here we report on the Ohmic contact resistance and reverse-bias characteristics of AlGaN/GaN Schottky barrier diodes with and without annealing. Annealing in oxygen at 500 degrees C resulted in an increase in the breakdown voltage from 641 to 1,172 V for devices with an anode-cathode separation of 20 mu m. However, these annealing conditions also resulted in an increase in the contact resistance of 0.183 Omega-mm, which is attributed to oxidation of the metal contacts. Auger electron spectroscopy revealed diffusion of oxygen and Au into the AlGaN and GaN layers following annealing. The improved reverse-bias characteristics following annealing in oxygen are attributed to passivation of dangling bonds and plasma damage due to interactions between oxygen and GaN/AlGaN. Thermal annealing is therefore useful during the fabrication of high-voltage GaN devices, but the effects on the Ohmic contact resistance should be considered.
- URI
- http://www.dbpia.co.kr/Journal/ArticleDetail/NODE06663213https://repository.hanyang.ac.kr/handle/20.500.11754/102279
- ISSN
- 1598-1657
- DOI
- 10.5573/JSTS.2016.16.2.179
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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