Effect of Al2O3/ZnO Nanolaminate by Atomic Layer Deposition (ALD) on p-Si Photocathode for Photoelectrochemical Hydrogen Evolution
- Title
- Effect of Al2O3/ZnO Nanolaminate by Atomic Layer Deposition (ALD) on p-Si Photocathode for Photoelectrochemical Hydrogen Evolution
- Author
- 이정호
- Keywords
- Atomic Layer Deposition; Nanolaminate; Photoelectrochemical; WATER; SILICON; GROWTH
- Issue Date
- 2015-11
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Citation
- SCIENCE OF ADVANCED MATERIALS, v. 7, No. 11, Page. 2492-2495
- Abstract
- Al2O3/ZnO (AZO) nanolaminate layer was deposited by atomic layer deposition (ALD) on p-type Si planar photocathode for photoelectrochemical hydrogen evolution reaction. ALD is the excellent method to deposit nanofilms with uniform morphology. AZO nanolaminate layer was expected to protect the p-Si photocathode from oxidation in an ambient condition, and to offer the surface passivation to prevent surface recombination. The % of Al2O3 in AZO was controlled in AZO layer, 100, 80, 50, 20%, and 100% ZnO, on the p-Si photocathode. The total thickness of AZO was fixed at similar to 2 nm by the number of ALD cycles. From the current density versus potential (J-V) curve, 100% Al2O3 showed the lowest overpotential.
- URI
- http://www.ingentaconnect.com/content/asp/sam/2015/00000007/00000011/art00031https://repository.hanyang.ac.kr/handle/20.500.11754/101712
- ISSN
- 1947-2935; 1947-2943
- DOI
- 10.1166/sam.2015.2401
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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