Electrical Characteristics of AlGaN/GaN Schottky Barrier Diodes with Different Capping Layers
- Title
- Electrical Characteristics of AlGaN/GaN Schottky Barrier Diodes with Different Capping Layers
- Author
- 박진섭
- Keywords
- Schottky Barrier Diode; AlGaN; Capping Layer
- Issue Date
- 2016-11
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 16, NO. 11, Page. 11635-11639
- Abstract
- We investigated the effects of various capping layers on the device performance of AlGaN/GaN Schottky barrier diodes (SBDs). The electrical characteristics of SBDs containing Ni/Au and Ti/Al/Ni/Au electrodes for the Schottky and Ohmic contacts, respectively, were observed by employing a current-voltage (I-V) measurement system. The I-V measurement results show that the reverse leakage current in the n-GaN capping layer formed on AlGaN/GaN SBD is 6-7 orders higher than those of the SBDs, both with the u-GaN capping layer and without a capping layer. The observed threading dislocation density (TDD) obtained by atomic force microscopy analysis of the different capping layer surfaces revealed that the n-GaN capping layer sample has almost a 3 times higher TDD than that of the samples both with the u-GaN capping layer and without a capping layer. From the proportional relationship between the TDD and leakage current level, threading dislocation can be the dominant path for the leakage current flow in AlGaN/GaN SBDs.
- URI
- https://www.ingentaconnect.com/content/asp/jnn/2016/00000016/00000011/art00101;jsessionid=1wleksmf3q4j9.x-ic-live-01https://repository.hanyang.ac.kr/handle/20.500.11754/101317
- ISSN
- 1533-4880; 1533-4899
- DOI
- 10.1166/jnn.2016.13565
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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