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Showing results 20 to 49 of 184

Issue DateTitleAuthor(s)
2017-12Carrier accumulation in the active region and its impact on the device performance of InGaN-based light-emitting diodes신동수
2017-12Carrier accumulation in the active region and its impact on the device performance of InGaN-based light-emitting diodes신동수
2015-12Carrier overflow in InGaN/GaN light-emitting diodes investigated by temperature-dependent short-circuit current characteristics신동수
2006-10Characteristics of 60-Ghz analog optical transmitter modules for radio-over-fiber applications신동수
2005-04Chirp parameter of electroabsorption modulators with InGaAsP intrastep quantum wells신동수
2006-11Chromeless phase lithography using scattering bars and zebra patterns신동수
2015-02Conduction Mechanisms of Leakage Currents in InGaN/GaN-Based Light-Emitting Diodes신동수
2015-02Conduction Mechanisms of Leakage Currents in InGaN/GaN-Based Light-Emitting Diodes신동수
2013-09Correlation between the efficiency droop and the blueshift of the electroluminescence in InGaN/GaN multiple-quantum-well blue light-emitting diodes신동수
2013-09Correlation between the efficiency droop and the blueshift of the electroluminescence in InGaN/GaN multiple-quantum-well blue light-emitting diodes신동수
2005-09Critical aspect of curing epoxy adhesive: fiber pistoning of LC connector신동수
2019-01Current–voltage characteristics of InGaN/GaN blue light-emitting diodes investigated by photovoltaic parameters신동수
2013-05Current, voltage and temperature distribution modeling of light-emitting diodes based on electrical and thermal circuit analysis신동수
2013-08Current, voltage and temperature distribution modeling of light-emitting diodes based on electrical and thermal circuit analysis신동수
2019-05Current- and temperature-dependent efficiency droops in InGaN-based blue and AlGaInP-based red light-emitting diodes신동수
2019-01Current-voltage characteristics of InGaN/GaN blue light-emitting diodes investigated by photovoltaic parameters신동수
2013-05Determination of the effect of a strain relaxation layer on the internal electric field measurement in an InGaN/GaN multiple-quantum-well structure by using electroreflectance spectroscopy신동수
2013-05Determination of the effect of a strain relaxation layer on the internal electric field measurement in an InGaN/GaN multiple-quantum-well structure by using electroreflectance spectroscopy신동수
2023-12Determining the turn-on voltage of GaN-based light-emitting diodes: From near-ultraviolet to green spectra신동수
2008-07Detuning Effects in an Electroabsorptin Modulator as a Transceiver for Picocell Radio-over-Fiber Application신동수
2005-08Effect of a step barrier on the quantum-confined Stark effect and applications to electroabsorption modulators with high saturation optical power신동수
2021-11Effect of defects on strain relaxation in InGaN/AlGaN multiple-quantum-well near-ultraviolet light-emitting diodes신동수
2010-07Effect of temperature distribution and current crowding on the performance of lateral GaN-based light-emitting diodes신동수
2016-01Effect of the p-type GaN thickness on the near-ultraviolet light-emitting diodes신동수
2015-05Effects of the number of quantum wells on the performance of near-ultraviolet light-emitting diodes신동수
2015-05Effects of the number of quantum wells on the performance of near-ultraviolet light-emitting diodes신동수
2016-08Effects of unbalanced carrier injection on the performance characteristics of InGaN light-emitting diodes신동수
2016-08Effects of unbalanced carrier injection on the performance characteristics of InGaN light-emitting diodes신동수
2012-03Efficiency droop in AlGaInP and GaInN light-emitting diodes신동수
2012-03Efficiency droop in AlGaInP and GaInN light-emitting diodes신동수
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