164 0

Determination of the effect of a strain relaxation layer on the internal electric field measurement in an InGaN/GaN multiple-quantum-well structure by using electroreflectance spectroscopy

Title
Determination of the effect of a strain relaxation layer on the internal electric field measurement in an InGaN/GaN multiple-quantum-well structure by using electroreflectance spectroscopy
Other Titles
GaN multiple-quantum-well structure by using electroreflectance spectroscopy
Author
신동수
Keywords
Piezoelectric field; Strain; Light-emitting diode; Electroreflectance spectroscopy
Issue Date
2013-05
Publisher
Korean Physical SOC
Citation
Journal of the Korean Physical Society, 2013, 62(9), P.1291-1294
Abstract
We investigate the effect of a strain relaxation layer (SRL) on the internal-field measurement of InGaN/GaN multiple quantum wells (MQWs) in blue light-emitting diodes by using electroreflectance (ER) spectroscopy. The polarization charges of the SRL are relatively smaller than those of the MQWs because the SRL has a lower indium composition in the InGaN/GaN superlattice. Therefore, the phases of the ER signals from the MQWs and the SRL are reversed at different bias voltages. From two different compensation voltages, the piezoelectric fields in MQWs and the SRL are estimated separately. When the SRL is not considered, the piezoelectric field in the MQWs can be underestimated.
URI
https://link.springer.com/article/10.3938%2Fjkps.62.1291http://hdl.handle.net/20.500.11754/44716
ISSN
0374-4884
DOI
10.3938/jkps.62.1291
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE