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Current–voltage characteristics of InGaN/GaN blue light-emitting diodes investigated by photovoltaic parameters

Title
Current–voltage characteristics of InGaN/GaN blue light-emitting diodes investigated by photovoltaic parameters
Author
신동수
Issue Date
2019-01
Publisher
IOP PUBLISHING LTD
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v. 58, Issue 1, Page. 1-5
Abstract
We investigate the current–voltage (I–V) characteristics of InGaN/GaN multiple-quantum-well blue light-emitting diodes (LEDs) to analyze the additional voltage drop outside the active region. We theoretically examine and measure the short-circuit current versus the open-circuit voltage (ISC–VOC) obtained by photoexcitation and compare them with the I–V obtained by electrical injection. The ISC–VOC curve shows the ideal I–V characteristics that do not contain the deviation from the exponential behavior. In the ideality factor obtained by differentiating the ISC–VOC curve, the increase of ideality factor due to the series resistance is not observed. The slope of the additional voltage drop ΔV versus current curve shows a nonlinear behavior, indicating that a simple ohmic voltage drop is not sufficient to explain ΔV. From these observations, it is concluded that the carrier recombination in the active region plays a non-negligible role in I–V characteristics of LEDs deviating from the ideal behavior.
URI
https://iopscience.iop.org/article/10.7567/1347-4065/aae92f/metahttps://repository.hanyang.ac.kr/handle/20.500.11754/103351
ISSN
0021-4922; 1347-4065
DOI
10.7567/1347-4065/aae92f
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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