2013-05 | Determination of the effect of a strain relaxation layer on the internal electric field measurement in an InGaN/GaN multiple-quantum-well structure by using electroreflectance spectroscopy | 신동수 |
2013-05 | Determination of the effect of a strain relaxation layer on the internal electric field measurement in an InGaN/GaN multiple-quantum-well structure by using electroreflectance spectroscopy | 신동수 |
2023-12 | Determining the turn-on voltage of GaN-based light-emitting diodes: From near-ultraviolet to green spectra | 신동수 |
2008-07 | Detuning Effects in an Electroabsorptin Modulator as a Transceiver for Picocell Radio-over-Fiber Application | 신동수 |
2005-08 | Effect of a step barrier on the quantum-confined Stark effect and applications to electroabsorption modulators with high saturation optical power | 신동수 |
2021-11 | Effect of defects on strain relaxation in InGaN/AlGaN multiple-quantum-well near-ultraviolet light-emitting diodes | 신동수 |
2010-07 | Effect of temperature distribution and current crowding on the performance of lateral GaN-based light-emitting diodes | 신동수 |
2016-01 | Effect of the p-type GaN thickness on the near-ultraviolet light-emitting diodes | 신동수 |
2015-05 | Effects of the number of quantum wells on the performance of near-ultraviolet light-emitting diodes | 신동수 |
2015-05 | Effects of the number of quantum wells on the performance of near-ultraviolet light-emitting diodes | 신동수 |
2016-08 | Effects of unbalanced carrier injection on the performance characteristics of InGaN light-emitting diodes | 신동수 |
2016-08 | Effects of unbalanced carrier injection on the performance characteristics of InGaN light-emitting diodes | 신동수 |
2012-03 | Efficiency droop in AlGaInP and GaInN light-emitting diodes | 신동수 |
2012-03 | Efficiency droop in AlGaInP and GaInN light-emitting diodes | 신동수 |
2011-01 | An efficiency droop model of the saturated radiative recombination rate and its verification by radiative and nonradiative carrier lifetime measurements in InGaN-based light emitting diodes | 신동수 |
2008-10 | Efficient adjustment of the RF parameters of directly modulated laser diodes with 'RF' light-current parameters | 신동수 |
2007-10 | Electrode dependence of resistance switching in NiO thin films | 신동수 |
2008-08 | Ellipsometry for Pellicle-Covered Surface | 신동수 |
2019-03 | Enhanced radiative recombination rate by local potential fluctuation in InGaN/AlGaN near-ultraviolet light-emitting diodes | 신동수 |
2019-03 | Enhanced Radiative Recombination Rate by Local Potential Fluctuation in InGaN/AlGaN Near-Ultraviolet Light-Emitting Diodes | 신동수 |
2015-02 | Enhancement in third-order output intercept point of high-power photodiodes by nonlinear voltage- and current-dependent responsivities | 신동수 |
2015-02 | Enhancement in third-order output intercept point of high-power photodiodes by nonlinear voltage- and current-dependent responsivities | 신동수 |
2009-05 | Enhancement of Light Extraction Efficiency Using Lozenge-Shaped GaN-Based Light-Emitting Diodes | 신동수 |
2009-06 | Enhancing current spreading by simple electrode pattern design methodology in lateral GaN/InGaN LEDs | 신동수 |
2012-06 | Estimate of the nonradiative carrier lifetime in InGaN/GaN quantum well structures by using time-resolved photoluminescence | 신동수 |
2012-06 | Estimate of the Nonradiative Carrier Lifetime in InGaN/GaN Quantum Well Structures by Using Time-resolved Photoluminescence | 신동수 |
2009-02 | Evolution of near-field electromagnetic interference by metallic nano-structures | 신동수 |
2011-03 | An explanation of efficiency droop in InGaN-based light emitting diodes: Saturated radiative recombination rate at randomly distributed In-rich active areas | 신동수 |
2023-12 | Extracting the inherent ideality factor of a diode from electrical current-voltage characteristics | 신동수 |
2018-02 | Factors Determining the Carrier Distribution in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes | 신동수 |