Estimate of the nonradiative carrier lifetime in InGaN/GaN quantum well structures by using time-resolved photoluminescence
- Title
- Estimate of the nonradiative carrier lifetime in InGaN/GaN quantum well structures by using time-resolved photoluminescence
- Other Titles
- GaN quantum well structures by using time-resolved photoluminescence
- Author
- 신동수
- Keywords
- Quantum wells; Light-emitting diodes; Carrier lifetime; Time-resolved photoluminescence
- Issue Date
- 2012-06
- Publisher
- Korean Physical SOC
- Citation
- Journal of Korean Physical Socitey, 2012, 60(11), P.1934-1938
- Abstract
- The nonradiative recombination carrier lifetime in InGaN/GaN quantum wells was measured utilizing a time-resolved photoluminescence measurement. The lifetime was estimated from the final decay stage of the temporal response of the photoluminescence, which is closely related to the nonradiative recombination. The nonradiative recombination carrier lifetime estimated by using the given method showed of relative independence from the carrier density in the quantum well. A study comparing the nonradiative recombination carrier lifetime estimated by using the given method with the results of temperature-dependent photoluminescence and current-dependent electroluminescence measurements at room temperature we performed. This unique method can be very useful for measuring the nonradiative carrier lifetime with good accuracy within a short time.
- URI
- https://link.springer.com/article/10.3938%2Fjkps.60.1934http://hdl.handle.net/20.500.11754/67856
- ISSN
- 0374-4884
- DOI
- 10.3938/jkps.60.1934
- Appears in Collections:
- GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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