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Comparative structural and electrical analysis of NiO and Ti doped NiO as materials for resistance random access memory

Title
Comparative structural and electrical analysis of NiO and Ti doped NiO as materials for resistance random access memory
Author
강보수
Keywords
FILMS; PERMITTIVITY; POLARIZATION
Issue Date
2008-01
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v. 103, No. 1, Article no. 013706
Abstract
In order to investigate the mechanism behind bistable resistance switching in NiO thin films, we have done detailed x-ray photon spectroscopy (XPS) and x-ray diffraction Analysis (XRD) on NiO and Ti doped NiO samples fabricated under various conditions. We discovered that a high initial resistivity was required for samples to undergo bistable resistance switching, and the presence of metallic Ni content in these samples was determined by XPS. XRD data also showed that NiO grown with a relative (200) orientation was preferred over those grown with relative (111) orientation. (c) 2008 American Institute of Physics.
URI
https://aip.scitation.org/doi/abs/10.1063/1.2829814http://repository.hanyang.ac.kr/handle/20.500.11754/76691
ISSN
0021-8979
DOI
10.1063/1.2829814
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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