Comparative structural and electrical analysis of NiO and Ti doped NiO as materials for resistance random access memory
- Title
- Comparative structural and electrical analysis of NiO and Ti doped NiO as materials for resistance random access memory
- Author
- 강보수
- Keywords
- FILMS; PERMITTIVITY; POLARIZATION
- Issue Date
- 2008-01
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v. 103, No. 1, Article no. 013706
- Abstract
- In order to investigate the mechanism behind bistable resistance switching in NiO thin films, we have done detailed x-ray photon spectroscopy (XPS) and x-ray diffraction Analysis (XRD) on NiO and Ti doped NiO samples fabricated under various conditions. We discovered that a high initial resistivity was required for samples to undergo bistable resistance switching, and the presence of metallic Ni content in these samples was determined by XPS. XRD data also showed that NiO grown with a relative (200) orientation was preferred over those grown with relative (111) orientation. (c) 2008 American Institute of Physics.
- URI
- https://aip.scitation.org/doi/abs/10.1063/1.2829814https://repository.hanyang.ac.kr/handle/20.500.11754/76691
- ISSN
- 0021-8979
- DOI
- 10.1063/1.2829814
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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