Reduced Electrical Defects and Improved Reliability of Atomic-Layer-Deposited HfO2 Dielectric Films by In Situ NH3 Injection
- Title
- Reduced Electrical Defects and Improved Reliability of Atomic-Layer-Deposited HfO2 Dielectric Films by In Situ NH3 Injection
- Author
- 박태주
- Keywords
- GATE DIELECTRICS; PLASMA; NITRIDATION; OXIDES; atomic layer deposition; current density; dielectric thin films; electrical conductivity; hafnium compounds; interface phenomena; leakage currents; nitrogen compounds; silicon compounds; thermal stability; vacancies (crystal)
- Issue Date
- 2009-03
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v. 156, No. 5, Page. 48-52
- Abstract
- The improvements in the reliability of HfO2 thin films afforded by in situ NH3 injection during their atomic layer depositions were studied. The NH3 injection increased nitrogen content and reduced the residual carbon in the film, which resulted in the reduced leakage current density and improved reliabilities. A smaller flatband voltage shift, higher breakdown field, and the suppressed degradation of interface traps by constant voltage stress were obtained due to the solid SiNx interfacial layer formation, decreased carbon content, and reduction of electrical defects by oxygen vacancies. The solid interfacial SiNx layer improved the thermal stability of the films. Detailed analysis of the current-voltage characteristics revealed the electrical conduction behavior and nature of defects. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3098978] All rights reserved.
- URI
- http://jes.ecsdl.org/content/156/5/G48.shorthttps://repository.hanyang.ac.kr/handle/20.500.11754/74705
- ISSN
- 0013-4651
- DOI
- 10.1149/1.3098978
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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