Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박태주 | - |
dc.date.accessioned | 2018-08-31T08:12:50Z | - |
dc.date.available | 2018-08-31T08:12:50Z | - |
dc.date.issued | 2009-03 | - |
dc.identifier.citation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v. 156, No. 5, Page. 48-52 | en_US |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.uri | http://jes.ecsdl.org/content/156/5/G48.short | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/74705 | - |
dc.description.abstract | The improvements in the reliability of HfO2 thin films afforded by in situ NH3 injection during their atomic layer depositions were studied. The NH3 injection increased nitrogen content and reduced the residual carbon in the film, which resulted in the reduced leakage current density and improved reliabilities. A smaller flatband voltage shift, higher breakdown field, and the suppressed degradation of interface traps by constant voltage stress were obtained due to the solid SiNx interfacial layer formation, decreased carbon content, and reduction of electrical defects by oxygen vacancies. The solid interfacial SiNx layer improved the thermal stability of the films. Detailed analysis of the current-voltage characteristics revealed the electrical conduction behavior and nature of defects. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3098978] All rights reserved. | en_US |
dc.description.sponsorship | The work was supported by the system IC 2010 project of the Korean government through Hynix Co. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ELECTROCHEMICAL SOC INC | en_US |
dc.subject | GATE DIELECTRICS | en_US |
dc.subject | PLASMA | en_US |
dc.subject | NITRIDATION | en_US |
dc.subject | OXIDES | en_US |
dc.subject | atomic layer deposition | en_US |
dc.subject | current density | en_US |
dc.subject | dielectric thin films | en_US |
dc.subject | electrical conductivity | en_US |
dc.subject | hafnium compounds | en_US |
dc.subject | interface phenomena | en_US |
dc.subject | leakage currents | en_US |
dc.subject | nitrogen compounds | en_US |
dc.subject | silicon compounds | en_US |
dc.subject | thermal stability | en_US |
dc.subject | vacancies (crystal) | en_US |
dc.title | Reduced Electrical Defects and Improved Reliability of Atomic-Layer-Deposited HfO2 Dielectric Films by In Situ NH3 Injection | en_US |
dc.type | Article | en_US |
dc.relation.no | 5 | - |
dc.relation.volume | 156 | - |
dc.identifier.doi | 10.1149/1.3098978 | - |
dc.relation.page | 48-52 | - |
dc.relation.journal | JOURNAL OF APPLIED ELECTROCHEMISTRY | - |
dc.contributor.googleauthor | Kim, Jeong Hwan | - |
dc.contributor.googleauthor | Park, Tae Joo | - |
dc.contributor.googleauthor | Cho, Moonju | - |
dc.contributor.googleauthor | Jang, Jae Hyuck | - |
dc.contributor.googleauthor | Seo, Minha | - |
dc.contributor.googleauthor | Na, Kwang Duk | - |
dc.contributor.googleauthor | Hwang, Cheol Seong | - |
dc.contributor.googleauthor | Won, Jeong Yeon | - |
dc.relation.code | 2009204655 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING | - |
dc.identifier.pid | tjp | - |
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