Indium-tin-oxide, free, flexible, nonvolatile memory devices based on graphene quantum dots sandwiched between polymethylsilsesquioxane layers
- Title
- Indium-tin-oxide, free, flexible, nonvolatile memory devices based on graphene quantum dots sandwiched between polymethylsilsesquioxane layers
- Author
- 김태환
- Keywords
- Flexible; Nonvolatile memory device; Graphene quantum dot; Polymethylsilsesquioxane; Electrical characteristic; Conduction mechanism
- Issue Date
- 2016-05
- Publisher
- ELSEVIER SCIENCE BV
- Citation
- ORGANIC ELECTRONICS, v. 32, Page. 115-119
- Abstract
- Indium-tin-oxide (ITO) free, nonvolatile memory (NVM) devices based on graphene quantum dots (GQDs) sandwiched between polymethylsilsesquioxane (PMSSQ) layers were fabricated directly on polyethylene terephthalate (PET) substrates by using a solution process technique. Current-voltage (I-V) curves for the silver nanowire/PMSSQ/GQD/PMSSQ/poly(3,4-ethylenethiophene):poly(styrene sulfonate)/PET devices at 300 K showed a current bistability. The ON/OFF ratio of the current bistability for the NVM devices was as large as 1 x 10(4), and the cycling endurance time of the ON/OFF switching for the NVM devices was above 1 x 10(4) s. The Schottky emission, Poole-Frenkel emission, trapped-charge limited-current, and space-charge-limited current were dominantly attributed to the conduction mechanisms for the fabricated NVM devices based on the obtained I-V characteristics, and energy band diagrams illustrating the "writing" and the "erasing" processes of the devices. (C) 2016 Elsevier B.V. All rights reserved.
- URI
- https://www.sciencedirect.com/science/article/pii/S1566119916300635?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/71534
- ISSN
- 1566-1199; 1878-5530
- DOI
- 10.1016/j.orgel.2016.02.020
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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