Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김태환 | - |
dc.date.accessioned | 2018-05-28T00:52:31Z | - |
dc.date.available | 2018-05-28T00:52:31Z | - |
dc.date.issued | 2016-05 | - |
dc.identifier.citation | ORGANIC ELECTRONICS, v. 32, Page. 115-119 | en_US |
dc.identifier.issn | 1566-1199 | - |
dc.identifier.issn | 1878-5530 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S1566119916300635?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/71534 | - |
dc.description.abstract | Indium-tin-oxide (ITO) free, nonvolatile memory (NVM) devices based on graphene quantum dots (GQDs) sandwiched between polymethylsilsesquioxane (PMSSQ) layers were fabricated directly on polyethylene terephthalate (PET) substrates by using a solution process technique. Current-voltage (I-V) curves for the silver nanowire/PMSSQ/GQD/PMSSQ/poly(3,4-ethylenethiophene):poly(styrene sulfonate)/PET devices at 300 K showed a current bistability. The ON/OFF ratio of the current bistability for the NVM devices was as large as 1 x 10(4), and the cycling endurance time of the ON/OFF switching for the NVM devices was above 1 x 10(4) s. The Schottky emission, Poole-Frenkel emission, trapped-charge limited-current, and space-charge-limited current were dominantly attributed to the conduction mechanisms for the fabricated NVM devices based on the obtained I-V characteristics, and energy band diagrams illustrating the "writing" and the "erasing" processes of the devices. (C) 2016 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | The authors would like to thank Prof. Haibo Xu from the Ocean University of China for providing the graphene quantum dots. This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2013R1A2A1A01016467), by the National Natural Science Foundation of China (61377027), and by the Natural Science Foundation of Fujian Province (2013J01233). | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCIENCE BV | en_US |
dc.subject | Flexible | en_US |
dc.subject | Nonvolatile memory device | en_US |
dc.subject | Graphene quantum dot | en_US |
dc.subject | Polymethylsilsesquioxane | en_US |
dc.subject | Electrical characteristic | en_US |
dc.subject | Conduction mechanism | en_US |
dc.title | Indium-tin-oxide, free, flexible, nonvolatile memory devices based on graphene quantum dots sandwiched between polymethylsilsesquioxane layers | en_US |
dc.type | Article | en_US |
dc.relation.volume | 32 | - |
dc.identifier.doi | 10.1016/j.orgel.2016.02.020 | - |
dc.relation.page | 115-119 | - |
dc.relation.journal | ORGANIC ELECTRONICS | - |
dc.contributor.googleauthor | Ooi, Poh Choon | - |
dc.contributor.googleauthor | Lin, Jian | - |
dc.contributor.googleauthor | Kim, Tae Whan | - |
dc.contributor.googleauthor | Li, Fushan | - |
dc.relation.code | 2016003624 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | twk | - |
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