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Device instability of postannealed TiOx thin-film transistors under gate bias stresses

Title
Device instability of postannealed TiOx thin-film transistors under gate bias stresses
Author
박진성
Keywords
TIN OXIDE-FILMS; ELECTRICAL CHARACTERISTICS; ANATASE TIO2; TEMPERATURE; FABRICATION; RUTILE
Issue Date
2013-03
Publisher
Amer INST Physics
Citation
Journal of Vacuum Science and Technology. B, 2013, 31(2), 021204
Abstract
This paper investigates the negative bias instability (NBS) and positive bias instability (PBS) of titanium oxide (TiOx) thin-film transistors (TFTs) with different annealing temperatures. Structural analyses suggested that TiOx films annealed at 450 and 550?°C had average grain sizes of 200 and 400?nm, respectively. A TiOx TFT annealed at 550?°C exhibited respective threshold voltage (Vth) shifts of only ?1.4 and 10.2?V under NBS and PBS conditions. The origin of the instability was found to be a charge trapping mechanism caused by different grain sizes, boundaries, and changes in band edge states below the conduction band, which acted as electron and hole trap sites.
URI
https://avs.scitation.org/doi/10.1116/1.4790572http://repository.hanyang.ac.kr/handle/20.500.11754/71063
ISSN
1071-1023
DOI
10.1116/1.4790572
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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