Device instability of postannealed TiOx thin-film transistors under gate bias stresses
- Title
- Device instability of postannealed TiOx thin-film transistors under gate bias stresses
- Author
- 박진성
- Keywords
- TIN OXIDE-FILMS; ELECTRICAL CHARACTERISTICS; ANATASE TIO2; TEMPERATURE; FABRICATION; RUTILE
- Issue Date
- 2013-03
- Publisher
- Amer INST Physics
- Citation
- Journal of Vacuum Science and Technology. B, 2013, 31(2), 021204
- Abstract
- This paper investigates the negative bias instability (NBS) and positive bias instability (PBS) of titanium oxide (TiOx) thin-film transistors (TFTs) with different annealing temperatures. Structural analyses suggested that TiOx films annealed at 450 and 550?°C had average grain sizes of 200 and 400?nm, respectively. A TiOx TFT annealed at 550?°C exhibited respective threshold voltage (Vth) shifts of only ?1.4 and 10.2?V under NBS and PBS conditions. The origin of the instability was found to be a charge trapping mechanism caused by different grain sizes, boundaries, and changes in band edge states below the conduction band, which acted as electron and hole trap sites.
- URI
- https://avs.scitation.org/doi/10.1116/1.4790572https://repository.hanyang.ac.kr/handle/20.500.11754/71063
- ISSN
- 1071-1023
- DOI
- 10.1116/1.4790572
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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