Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2018-04-30T03:55:02Z | - |
dc.date.available | 2018-04-30T03:55:02Z | - |
dc.date.issued | 2013-03 | - |
dc.identifier.citation | Journal of Vacuum Science and Technology. B, 2013, 31(2), 021204 | en_US |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | https://avs.scitation.org/doi/10.1116/1.4790572 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/71063 | - |
dc.description.abstract | This paper investigates the negative bias instability (NBS) and positive bias instability (PBS) of titanium oxide (TiOx) thin-film transistors (TFTs) with different annealing temperatures. Structural analyses suggested that TiOx films annealed at 450 and 550?°C had average grain sizes of 200 and 400?nm, respectively. A TiOx TFT annealed at 550?°C exhibited respective threshold voltage (Vth) shifts of only ?1.4 and 10.2?V under NBS and PBS conditions. The origin of the instability was found to be a charge trapping mechanism caused by different grain sizes, boundaries, and changes in band edge states below the conduction band, which acted as electron and hole trap sites. | en_US |
dc.description.sponsorship | This research was supported by the Basic Science Research Program of the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Scienceand Technology (Grant Nos. 2012-0002430, 2011-0004433, and 2012-011730). | en_US |
dc.language.iso | en | en_US |
dc.publisher | Amer INST Physics | en_US |
dc.subject | TIN OXIDE-FILMS | en_US |
dc.subject | ELECTRICAL CHARACTERISTICS | en_US |
dc.subject | ANATASE TIO2 | en_US |
dc.subject | TEMPERATURE | en_US |
dc.subject | FABRICATION | en_US |
dc.subject | RUTILE | en_US |
dc.title | Device instability of postannealed TiOx thin-film transistors under gate bias stresses | en_US |
dc.type | Article | en_US |
dc.relation.volume | 31 | - |
dc.identifier.doi | 10.1116/1.4790572 | - |
dc.relation.page | 212041-212044 | - |
dc.relation.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.contributor.googleauthor | Ahn, Byung Du | - |
dc.contributor.googleauthor | Ok, Kyung-Chul | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.contributor.googleauthor | Chung, Kwun-Bum | - |
dc.relation.code | 2013011097 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
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