Development of low temperature CHip-on-Flex (COF) bonding process of 100℃
- Title
- Development of low temperature CHip-on-Flex (COF) bonding process of 100℃
- Author
- 김영호
- Issue Date
- 2012-12
- Publisher
- IEEE
- Citation
- Electronic Materials and Packaging (EMAP), 2012 14th International Conference on 2012, pp.1 - 3
- Abstract
- Recently, many researchers have introduced low temperature bonding technology using Anisotropic conductive film (ACF) or Nonconductive adhesive (NCA). In their studies, the bonding temperature is in the range between 150°C and 200°C. In this study, we developed a Chip-on-Flex (COF) bonding process of 100°C by using Sn-Ag bumps and nonconductive film (NCF). Sn-Ag bumps were formed by electroplating and reflowed to form dome shape. The COF bonding was performed between Sn-Ag bumps and Cu/Polyimide film substrates using a thermo-compression bonder at 100°C for 5 s. The low temperature curable NCF was applied during the bonding process. The Sn-Ag bumps were deformed and direct contact was made between Sn-Ag bumps and Cu/PI substrate during thermo-compression bonding. The initial contact resistance of all joints was less than 30 mΩ, and no COF joints failed electrically. To evaluate reliability of COF joints, Temperature & Humidity (T&H) test (85°C/85% RH) was performed for 1000 hr. The contact resistance was increased during reliability test. However, the failed joints were not observed after T&H test. The contact resistance change will be discussed in terms of microstructure change in the COF joints.
- URI
- http://ieeexplore.ieee.org/document/6507904/http://hdl.handle.net/20.500.11754/54380
- ISSN
- 1355-7599
- DOI
- 10.1109/EMAP.2012.6507904
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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