Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 최창환 | - |
dc.date.accessioned | 2018-03-26T05:34:54Z | - |
dc.date.available | 2018-03-26T05:34:54Z | - |
dc.date.issued | 2014-09 | - |
dc.identifier.citation | Applied Physics Letters, 2014, 105(9), P.092103-1~092103-4 | en_US |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://aip.scitation.org/doi/10.1063/1.4895102 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/52376 | - |
dc.description.abstract | We investigated the electrical properties of zinc tin oxide (ZTO) films deposited via atomic layer deposition and compared them to ZnO and SnO2 films as a function of the annealing temperature. The ZTO and ZnO, except for SnO2, films exhibited an electrical transition from a metal to semiconductor characteristics when annealed above 300 C. The X-ray photoelectron spectroscopy analyses indicate that the relative area of the oxygen vacancy-related peak decreased from 58% to 41% when annealing at temperatures above 400 C. Thin film transistors incorporating ZTO active layers demonstrated a mobility of 13.2 cm2/V s and a negative bias instability of 0.2 V. VC 2014 AIP Publishing LLC. | en_US |
dc.description.sponsorship | This work was supported by the RFID R&D program of MKE/KEIT. [10035225, Development of core technology for high performance AMOLED on plastic.] | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMERICAN INSTITUTE OF PHYSICS | en_US |
dc.subject | 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ANNEALING | en_US |
dc.subject | CARRIER MOBILITY | en_US |
dc.subject | DEPOSITS | en_US |
dc.subject | ELECTRICAL PROPERTIES | en_US |
dc.subject | INSTABILITY | en_US |
dc.subject | METALS | en_US |
dc.subject | OXYGEN | en_US |
dc.subject | SEMICONDUCTOR MATERIALS | en_US |
dc.subject | TEMPERATURE DEPENDENCE | en_US |
dc.subject | TEMPERATURE RANGE 0400-1000 K | en_US |
dc.subject | THIN FILMS | en_US |
dc.subject | TIN OXIDES | en_US |
dc.subject | TRANSISTORS | en_US |
dc.subject | VACANCIES | en_US |
dc.subject | X-RAY PHOTOELECTRON SPECTROSCOPY | en_US |
dc.subject | ZINC OXIDES | en_US |
dc.title | The effect of the annealing temperature on the transition from conductor to semiconductor behavior in zinc tin oxide deposited atomic layer deposition | en_US |
dc.type | Article | en_US |
dc.relation.volume | 105 | - |
dc.identifier.doi | 10.1063/1.4895102 | - |
dc.relation.page | 921031-921034 | - |
dc.relation.journal | APPLIED PHYSICS LETTERS | - |
dc.contributor.googleauthor | Ahn, Byung Du | - |
dc.contributor.googleauthor | Choi, Dong-won | - |
dc.contributor.googleauthor | Choi, Changwan | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.relation.code | 2014025338 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | cchoi | - |
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