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COLLEGE OF ENGINEERING[S](공과대학)
ELECTRONIC ENGINEERING(융합전자공학부)
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2016-10
Dependency of tunneling magnetoresistance ratio on Pt seed-layer thickness for double MgO perpendicular magnetic tunneling junction spin-valves with a top Co2Fe6B2 free layer ex-situ annealed at 400 degrees C
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2016-09
Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co˂inf˃2˂/inf˃Fe˂inf˃6˂/inf˃B˂inf˃2˂/inf˃ Free Layer Structure
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p-MTJ
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TMR ratio
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Pt diffusion
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Pt seed
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Top and bottom free layer
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2016
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