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Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co˂inf˃2˂/inf˃Fe˂inf˃6˂/inf˃B˂inf˃2˂/inf˃ Free Layer Structure

Title
Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co˂inf˃2˂/inf˃Fe˂inf˃6˂/inf˃B˂inf˃2˂/inf˃ Free Layer Structure
Author
박재근
Keywords
p-MTJ; BEOL; TMR ratio; Pt diffusion; Top and bottom free layer
Issue Date
2016-09
Publisher
SPRINGER
Citation
NANOSCALE RESEARCH LETTERS, v. 11, NO. 1, Page. 1-7
Abstract
For the perpendicular-magnetic-tunneling-junction (p-MTJ) spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer ex situ annealed at 400 degrees C, which has been used as a common p-MTJ structure, the Pt atoms of the Pt buffer layer diffused into the MgO tunneling barrier. This transformed the MgO tunneling barrier from a body-centered cubic (b.c.c) crystallized layer into a mixture of b.c.c, face-centered cubic, and amorphous layers and rapidly decreased the tunneling-magnetoresistance (TMR) ratio. The p-MTJ spin valve with a nanoscale-thick top Co2Fe6B2 free layer could prevent the Pt atoms diffusing into the MgO tunneling barrier during ex situ annealing at 400 degrees C because of non-necessity of a Pt buffer layer, demonstrating the TMR ratio of similar to 143 %.
URI
https://nanoscalereslett.springeropen.com/articles/10.1186/s11671-016-1637-9http://repository.hanyang.ac.kr/handle/20.500.11754/76755
ISSN
1556-276X
DOI
10.1186/s11671-016-1637-9
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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