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Dependency of tunneling magnetoresistance ratio on Pt seed-layer thickness for double MgO perpendicular magnetic tunneling junction spin-valves with a top Co2Fe6B2 free layer ex-situ annealed at 400 degrees C

Title
Dependency of tunneling magnetoresistance ratio on Pt seed-layer thickness for double MgO perpendicular magnetic tunneling junction spin-valves with a top Co2Fe6B2 free layer ex-situ annealed at 400 degrees C
Author
박재근
Keywords
Pt seed; p-MTJ; TMR ratio; BEOL
Issue Date
2016-10
Publisher
IOP PUBLISHING LTD
Citation
NANOTECHNOLOGY, v. 27, NO. 48, Page. 1-6
Abstract
For the double MgO based perpendicular magnetic tunneling junction (p-MTJ) spin-valves with a top Co2Fe6B2 free layer ex situ annealed at 400 degrees C, the tunneling-magnetoresistance ratio (TMR) strongly depended on the platinum (Pt) seed layer thickness (t(Pt)): it peaked (similar to 134%) at a specific t(Pt) (3.3 nm). The TMR ratio was initially and slightly increased from 113%-134% by the enhancement of the magnetic moment of the Co2Fe6B2 pinned layer when tPt increased from 2.0-3.3 nm, and then rapidly decreased from 134%-38.6% by the degrading face-centered-cubic crystallinity of the MgO tunneling barrier when tPt increased from 3.3-14.3 nm.
URI
http://iopscience.iop.org/article/10.1088/0957-4484/27/48/485203/metahttp://repository.hanyang.ac.kr/handle/20.500.11754/80767
ISSN
0957-4484; 1361-6528
DOI
10.1088/0957-4484/27/48/485203
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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