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COLLEGE OF ENGINEERING[S](공과대학)
ELECTRONIC ENGINEERING(융합전자공학부)
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Results 1-3 of 3 (Search time: 0.001 seconds).
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Author(s)
2016-10
Dependency of tunneling magnetoresistance ratio on Pt seed-layer thickness for double MgO perpendicular magnetic tunneling junction spin-valves with a top Co2Fe6B2 free layer ex-situ annealed at 400 degrees C
박재근
2016-06
Effect of coupling ability between a synthetic antiferromagnetic layer and pinned layer on a bridging layer of Ta, Ti, and Pt in perpendicular-magnetic tunnel junctions
박재근
2016-09
Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co˂inf˃2˂/inf˃Fe˂inf˃6˂/inf˃B˂inf˃2˂/inf˃ Free Layer Structure
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TMR ratio
2
BEOL
1
bridging layer
1
coupling ability
1
Pt diffusion
1
Pt seed
1
Top and bottom free layer
-Date issued
3
2016
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