Dependence of nickel gettering on crystalline nature in as-grown Czochralski silicon wafer
- Title
- Dependence of nickel gettering on crystalline nature in as-grown Czochralski silicon wafer
- Author
- 박재근
- Keywords
- Defects; Impurities; Pointdefects; Czochralskimethod; Singlecrystalgrowth; Semiconductingsilicon
- Issue Date
- 2013-02
- Publisher
- Elsevier Science B.V., Amsterdam.
- Citation
- JOURNAL OF CRYSTAL GROWTH, 2013 , 365, p.6-10
- Abstract
- The efficiency of nickel gettering in vacancy- and interstitial-silicon-dominant crystalline nature was studied using wafers cut along the axial direction of a CZ-grown silicon ingot grown with a variable v/G ratio. Six crystalline areas (V-rich, P-band, P-v, P-I, B-band, and l-rich) were present within one wafer. Nickel gettering efficiency was estimated before and after a typical NAND-flash-memory heat-treatment. With as-grown CZ silicon wafers, nickel gettering depends on the crystalline nature, i.e., nickel atoms are mainly gathered at oxygen precipitates in bulk at vacancy-dominant crystalline regions and at the surface of pure silicon in the interstitial-silicon-dominant crystal region (P-I). Rapid thermal annealing of a CZ silicon wafer at 1175 degrees C for 10 s in Ar/NH3 mixture ambient completely erased the dependency of nickel gettering on the crystalline nature and demonstrated an excellent getting ability for nickel contamination via the relaxation gettering of oxygen precipitates.
- URI
- https://www.sciencedirect.com/science/article/pii/S0022024812009177?via%3Dihubhttp://hdl.handle.net/20.500.11754/51774
- ISSN
- 0022-0248
- DOI
- 10.1016/j.jcrysgro.2012.12.033
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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