Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박재근 | - |
dc.date.accessioned | 2018-03-24T04:30:42Z | - |
dc.date.available | 2018-03-24T04:30:42Z | - |
dc.date.issued | 2013-02 | - |
dc.identifier.citation | JOURNAL OF CRYSTAL GROWTH, 2013 , 365, p.6-10 | en_US |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0022024812009177?via%3Dihub | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/51774 | - |
dc.description.abstract | The efficiency of nickel gettering in vacancy- and interstitial-silicon-dominant crystalline nature was studied using wafers cut along the axial direction of a CZ-grown silicon ingot grown with a variable v/G ratio. Six crystalline areas (V-rich, P-band, P-v, P-I, B-band, and l-rich) were present within one wafer. Nickel gettering efficiency was estimated before and after a typical NAND-flash-memory heat-treatment. With as-grown CZ silicon wafers, nickel gettering depends on the crystalline nature, i.e., nickel atoms are mainly gathered at oxygen precipitates in bulk at vacancy-dominant crystalline regions and at the surface of pure silicon in the interstitial-silicon-dominant crystal region (P-I). Rapid thermal annealing of a CZ silicon wafer at 1175 degrees C for 10 s in Ar/NH3 mixture ambient completely erased the dependency of nickel gettering on the crystalline nature and demonstrated an excellent getting ability for nickel contamination via the relaxation gettering of oxygen precipitates. | en_US |
dc.description.sponsorship | This work was supported by the Energy R&D Program(20093021010010) sponsored by the Korean Ministry of Knowl-edge Economy (MKE), the Brain Korea 21 Project in 2012 and SiWEDS (Silicon Wafer Engineering and Defect Science), an Industry/University Cooperative Research Center under NSF Grant. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier Science B.V., Amsterdam. | en_US |
dc.subject | Defects | en_US |
dc.subject | Impurities | en_US |
dc.subject | Pointdefects | en_US |
dc.subject | Czochralskimethod | en_US |
dc.subject | Singlecrystalgrowth | en_US |
dc.subject | Semiconductingsilicon | en_US |
dc.title | Dependence of nickel gettering on crystalline nature in as-grown Czochralski silicon wafer | en_US |
dc.type | Article | en_US |
dc.relation.volume | 365 | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2012.12.033 | - |
dc.relation.page | 6-10 | - |
dc.relation.journal | JOURNAL OF CRYSTAL GROWTH | - |
dc.contributor.googleauthor | Lee, In-Ji | - |
dc.contributor.googleauthor | Paik, Ungyu | - |
dc.contributor.googleauthor | Park, Jea-Gu | - |
dc.relation.code | 2013010618 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | parkjgl | - |
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