Analysis of trap distribution in polysilicon channel transistors using the variable amplitude charge pumping method
- Title
- Analysis of trap distribution in polysilicon channel transistors using the variable amplitude charge pumping method
- Author
- 정재경
- Keywords
- Polysilicon; Charge pumping; Channel trap density; Trap distribution; Grain size effect; Hot carrier injection
- Issue Date
- 2014-12
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Citation
- SOLID-STATE ELECTRONICS, 권: 104, 페이지: 86-89
- Abstract
- The trap distribution of a polysilicon (poly-Si) channel in a metal-oxide-semiconductor field effect transistor (MOSFET) was extracted successfully using a variable amplitude charge pumping method (VACP) and an energy band bending model. Compared to single crystal Si channels, the poly-Si channels exhibited a high density of bulk channel traps due to the presence of grain boundaries. The densities of the trap states existing in the poly-silicon channel with various grain sizes and channel thicknesses were extracted and compared. The grain size of poly-Si was found to have a stronger impact on the trap distribution than the channel thickness. After hot carrier stress, the trap density in the poly-silicon channel increases and the generated traps are located both at mid gap energy level and near the conduction band energy level. (C) 2014 Elsevier Ltd. All rights reserved.
- URI
- https://www.sciencedirect.com/science/article/pii/S0038110114002834?via%3Dihubhttp://hdl.handle.net/20.500.11754/51645
- ISSN
- 0038-1101; 1879-2405
- DOI
- 10.1016/j.sse.2014.11.015
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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