Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 정재경 | - |
dc.date.accessioned | 2018-03-23T08:44:33Z | - |
dc.date.available | 2018-03-23T08:44:33Z | - |
dc.date.issued | 2014-12 | - |
dc.identifier.citation | SOLID-STATE ELECTRONICS, 권: 104, 페이지: 86-89 | en_US |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.issn | 1879-2405 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0038110114002834?via%3Dihub | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/51645 | - |
dc.description.abstract | The trap distribution of a polysilicon (poly-Si) channel in a metal-oxide-semiconductor field effect transistor (MOSFET) was extracted successfully using a variable amplitude charge pumping method (VACP) and an energy band bending model. Compared to single crystal Si channels, the poly-Si channels exhibited a high density of bulk channel traps due to the presence of grain boundaries. The densities of the trap states existing in the poly-silicon channel with various grain sizes and channel thicknesses were extracted and compared. The grain size of poly-Si was found to have a stronger impact on the trap distribution than the channel thickness. After hot carrier stress, the trap density in the poly-silicon channel increases and the generated traps are located both at mid gap energy level and near the conduction band energy level. (C) 2014 Elsevier Ltd. All rights reserved. | en_US |
dc.description.sponsorship | This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2012R1A 2A2A02005854). This work was also supported by an Inha University Research Grant. | en_US |
dc.language.iso | en | en_US |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | en_US |
dc.subject | Polysilicon | en_US |
dc.subject | Charge pumping | en_US |
dc.subject | Channel trap density | en_US |
dc.subject | Trap distribution | en_US |
dc.subject | Grain size effect | en_US |
dc.subject | Hot carrier injection | en_US |
dc.title | Analysis of trap distribution in polysilicon channel transistors using the variable amplitude charge pumping method | en_US |
dc.type | Article | en_US |
dc.relation.volume | 104 | - |
dc.identifier.doi | 10.1016/j.sse.2014.11.015 | - |
dc.relation.page | 86-89 | - |
dc.relation.journal | SOLID-STATE ELECTRONICS | - |
dc.contributor.googleauthor | Manh-Cuong Nguyen | - |
dc.contributor.googleauthor | Jeon, Yoon-Seok | - |
dc.contributor.googleauthor | Tong, Duc-Tai | - |
dc.contributor.googleauthor | You, Seung-Won | - |
dc.contributor.googleauthor | Jeong, Jae-Kyeong | - |
dc.contributor.googleauthor | Kim, Bio | - |
dc.contributor.googleauthor | Ahn, Jae-Young | - |
dc.contributor.googleauthor | Hwang, Kihyun | - |
dc.contributor.googleauthor | Choi, Rino | - |
dc.relation.code | 2014039627 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | jkjeong1 | - |
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