Microstructural, optical, and electrical properties of Ni-Al co-doped ZnO films prepared by DC magnetron sputtering
- Title
- Microstructural, optical, and electrical properties of Ni-Al co-doped ZnO films prepared by DC magnetron sputtering
- Author
- Kwan-San Hui
- Keywords
- Composites; Thin films; Sputtering; X-ray diffraction; Optical properties
- Issue Date
- 2014-03
- Publisher
- Elsevier Science B.V., Amsterdam.
- Citation
- Materials research bulletin, Vol.51 No.- [2014], pp. 345-350
- Abstract
- Ni-Al co-doped ZnO (NiAl:ZnO) films with fixed Al content at 2wt% and different Ni contents (2.5, 3, and 5wt%) were deposited by DC magnetron sputtering in an argon atmosphere at room temperature. X-ray diffraction revealed that all films showed a highly preferential (002) c-axis orientation. XPS revealed the presence of metallic Ni, NiO, and Ni 2 O 3 states, and Ni atoms were successfully doped in NiAl:ZnO films, which did not result in a change in ZnO crystal structure and orientation. The electrical resistivity of NiAl:ZnO film was decreased to 2.59x10 -3 Ωcm at a Ni doping concentration of 3wt% compared with undoped Al-doped ZnO film (5.58x10 -3 Ωcm). The mean optical transmittance in the visible range was greater than 80% for all films. Band gap widening (4.18eV) was observed in the NiAl:ZnO films with 5wt% Ni, attributed to the Burstein-Moss shift due to the increase of carrier concentration.
- URI
- http://www.sciencedirect.com/science/article/pii/S0025540813009872http://hdl.handle.net/20.500.11754/50507
- ISSN
- 0025-5408
- DOI
- 10.1016/j.materresbull.2013.12.026
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MECHANICAL ENGINEERING(기계공학부) > Articles
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