Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kwan-San Hui | - |
dc.date.accessioned | 2018-03-22T05:35:42Z | - |
dc.date.available | 2018-03-22T05:35:42Z | - |
dc.date.issued | 2014-03 | - |
dc.identifier.citation | Materials research bulletin, Vol.51 No.- [2014], pp. 345-350 | en_US |
dc.identifier.issn | 0025-5408 | - |
dc.identifier.uri | http://www.sciencedirect.com/science/article/pii/S0025540813009872 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/50507 | - |
dc.description.abstract | Ni-Al co-doped ZnO (NiAl:ZnO) films with fixed Al content at 2wt% and different Ni contents (2.5, 3, and 5wt%) were deposited by DC magnetron sputtering in an argon atmosphere at room temperature. X-ray diffraction revealed that all films showed a highly preferential (002) c-axis orientation. XPS revealed the presence of metallic Ni, NiO, and Ni 2 O 3 states, and Ni atoms were successfully doped in NiAl:ZnO films, which did not result in a change in ZnO crystal structure and orientation. The electrical resistivity of NiAl:ZnO film was decreased to 2.59x10 -3 Ωcm at a Ni doping concentration of 3wt% compared with undoped Al-doped ZnO film (5.58x10 -3 Ωcm). The mean optical transmittance in the visible range was greater than 80% for all films. Band gap widening (4.18eV) was observed in the NiAl:ZnO films with 5wt% Ni, attributed to the Burstein-Moss shift due to the increase of carrier concentration. | en_US |
dc.description.sponsorship | This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2010-0023418), a grant from the National Core Research Center (NCRC) Program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (No. 2012-0000-957), and a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea. In this study, we acknowledged XPS measurements (ESCALAB250 XPS system, Theta Probe XPS system) from KBSI, Busan Center. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier Science B.V., Amsterdam. | en_US |
dc.subject | Composites | en_US |
dc.subject | Thin films | en_US |
dc.subject | Sputtering | en_US |
dc.subject | X-ray diffraction | en_US |
dc.subject | Optical properties | en_US |
dc.title | Microstructural, optical, and electrical properties of Ni-Al co-doped ZnO films prepared by DC magnetron sputtering | en_US |
dc.type | Article | en_US |
dc.relation.volume | 51 | - |
dc.identifier.doi | 10.1016/j.materresbull.2013.12.026 | - |
dc.relation.page | 345-350 | - |
dc.relation.journal | MATERIALS RESEARCH BULLETIN | - |
dc.contributor.googleauthor | Jo, Young Dae | - |
dc.contributor.googleauthor | Hui, K. N. | - |
dc.contributor.googleauthor | Hui, Kwan-San | - |
dc.contributor.googleauthor | Cho, Y. R. | - |
dc.contributor.googleauthor | Kim, Kwang Ho | - |
dc.relation.code | 2014035691 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MECHANICAL ENGINEERING | - |
dc.identifier.pid | kshui | - |
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