Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 오혜근 | - |
dc.date.accessioned | 2018-03-19T00:04:42Z | - |
dc.date.available | 2018-03-19T00:04:42Z | - |
dc.date.issued | 2016-01 | - |
dc.identifier.citation | JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, v. 15, No. 2, Article no. 210031-210039 | en_US |
dc.identifier.issn | 1932-5150 | - |
dc.identifier.issn | 1932-5134 | - |
dc.identifier.uri | https://www.spiedigitallibrary.org/journals/Journal-of-MicroNanolithography-MEMS-and-MOEMS/volume-15/issue-2/021003/Impact-of-a-deformed-extreme-ultraviolet-pellicle-in-terms-of/10.1117/1.JMM.15.2.021003.full?SSO=1 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/48456 | - |
dc.description.abstract | The usage of an extreme ultraviolet (EUV) pellicle is regarded as a potential solution for defect control because it can protect the mask from airborne debris. However, some obstacles disrupt realistic application of the pellicle, such as its structural weakness, the risk of thermal damage, and so on. For these reasons, flawless fabrication of the pellicle is impossible. We discuss the influence of a deformed pellicle in terms of the nonuniform intensity distribution and the critical dimension (CD) uniformity. When we consider a 16-nm periodic pattern with dipole illumination, a transmission difference (max-min) of 0.7% causes CD uniformity of 0.1 nm. The deflection of the aerial image caused by gravity is small enough to ignore. CD uniformity is ˂0.1 nm, even for the current gap of 2 mm between the mask and pellicle. However, wrinkling of the EUV pellicle, caused by heat, can cause serious image distortion because a wrinkled EUV pellicle experiences both transmission loss variation as well as CD nonuniformity. The local angle of a wrinkle (as opposed to the period or amplitude of a wrinkle) is the main factor that influences CD uniformity, and a local angle of ˂ similar to 16 deg is needed to achieve 0.1-nm CD uniformity for a 16-nm L/S pattern. (C) 2016 Society of Photo-Optical Instrumentation Engineers (SPIE) | en_US |
dc.description.sponsorship | This work was supported by the Future Semiconductor Device Technology Development Program #10045366 funded by Ministry of Trade, Industry & Energy and Korea Semiconductor Research Consortium. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | SPIE-SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS | en_US |
dc.subject | extreme ultraviolet lithography | en_US |
dc.subject | pellicle | en_US |
dc.subject | pellicle deformation | en_US |
dc.subject | critical dimension uniformity | en_US |
dc.subject | LITHOGRAPHY | en_US |
dc.title | Impact of a deformed extreme ultraviolet pellicle in terms of the critical dimension uniformity | en_US |
dc.type | Article | en_US |
dc.relation.no | 2 | - |
dc.relation.volume | 15 | - |
dc.identifier.doi | 10.1117/1.JMM.15.2.021003 | - |
dc.relation.page | 210031-210039 | - |
dc.relation.journal | JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS | - |
dc.contributor.googleauthor | Kim, In-Seon | - |
dc.contributor.googleauthor | Yeung, Michael | - |
dc.contributor.googleauthor | Barouch, Eytan | - |
dc.contributor.googleauthor | Oh, Hye-Keun | - |
dc.relation.code | 2016007288 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF APPLIED PHYSICS | - |
dc.identifier.pid | hyekeun | - |
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