Scanning transmission X-ray microscopy probe for in situ mechanism study of graphene-oxide-based resistive random access memory
- Title
- Scanning transmission X-ray microscopy probe for in situ mechanism study of graphene-oxide-based resistive random access memory
- Author
- 윤태현
- Keywords
- in situ; scanning transmission X-ray microscopy; STXM; graphene oxide; GO-RRAM; bipolar resistive switching mechanism; oxygen ion drift model
- Issue Date
- 2014-01
- Publisher
- INT UNION CRYSTALLOGRAPHY
- Citation
- JOURNAL OF SYNCHROTRON RADIATION; JAN 2014, 21, p170-p176
- Abstract
- Here, an in situ probe for scanning transmission X-ray microscopy (STXM) has been developed and applied to the study of the bipolar resistive switching (BRS) mechanism in an Al/graphene oxide (GO)/Al resistive random access memory (RRAM) device. To perform in situ STXM studies at the C K-and O K-edges, both the RRAM junctions and the I-0 junction were fabricated on a single Si3N4 membrane to obtain local XANES spectra at these absorption edges with more delicate I-0 normalization. Using this probe combined with the synchrotron-based STXM technique, it was possible to observe unique chemical changes involved in the BRS process of the Al/GO/Al RRAM device. Reversible oxidation and reduction of GO induced by the externally applied bias voltages were observed at the O K-edge XANES feature located at 538.2 eV, which strongly supported the oxygen ion drift model that was recently proposed from ex situ transmission electron microscope studies.
- URI
- http://onlinelibrary.wiley.com/doi/10.1107/S1600577513026696/abstracthttp://hdl.handle.net/20.500.11754/47156
- ISSN
- 1600-5775
- DOI
- 10.1107/S1600577513026696
- Appears in Collections:
- COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > CHEMISTRY(화학과) > Articles
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML