Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 윤태현 | - |
dc.date.accessioned | 2018-03-15T05:54:06Z | - |
dc.date.available | 2018-03-15T05:54:06Z | - |
dc.date.issued | 2014-01 | - |
dc.identifier.citation | JOURNAL OF SYNCHROTRON RADIATION; JAN 2014, 21, p170-p176 | en_US |
dc.identifier.issn | 1600-5775 | - |
dc.identifier.uri | http://onlinelibrary.wiley.com/doi/10.1107/S1600577513026696/abstract | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/47156 | - |
dc.description.abstract | Here, an in situ probe for scanning transmission X-ray microscopy (STXM) has been developed and applied to the study of the bipolar resistive switching (BRS) mechanism in an Al/graphene oxide (GO)/Al resistive random access memory (RRAM) device. To perform in situ STXM studies at the C K-and O K-edges, both the RRAM junctions and the I-0 junction were fabricated on a single Si3N4 membrane to obtain local XANES spectra at these absorption edges with more delicate I-0 normalization. Using this probe combined with the synchrotron-based STXM technique, it was possible to observe unique chemical changes involved in the BRS process of the Al/GO/Al RRAM device. Reversible oxidation and reduction of GO induced by the externally applied bias voltages were observed at the O K-edge XANES feature located at 538.2 eV, which strongly supported the oxygen ion drift model that was recently proposed from ex situ transmission electron microscope studies. | en_US |
dc.description.sponsorship | This research was supported by the Basic Science ResearchProgram through the National Research Foundation of Korea(NRF) funded by the Ministry of Education (NRF-2012R1A1A2009505). HWN and HJS also appreciate supportfrom the Korea government, Ministry of Science, ICT andFuture Planning (MSIP) (No. 20080062606, CELA-NCRC)and PAL through the abroad beam time program of theSynchrotron Radiation Facility Project under MEST. SYC andJYK acknowledge grants from the Global Frontier ResearchCenter for Advanced Soft Electronics (NRF, 20110033640)and the Creative Research Program of ETRI (13ZE1110).We also thank Dr C. Karunakaran and Y. Lu for their assis-tance at CLS SM beamline. The Canadian Light Source issupported by the Natural Sciences and Engineering ResearchCouncil of Canada, the National Research Council Canada,the Canadian Institutes of Health Research, the Provin ce ofSaskatchewan, Western Economic Dive rsification Canada,and the University of Saskatchewan. | en_US |
dc.language.iso | en | en_US |
dc.publisher | INT UNION CRYSTALLOGRAPHY | en_US |
dc.subject | in situ | en_US |
dc.subject | scanning transmission X-ray microscopy | en_US |
dc.subject | STXM | en_US |
dc.subject | graphene oxide | en_US |
dc.subject | GO-RRAM | en_US |
dc.subject | bipolar resistive switching mechanism | en_US |
dc.subject | oxygen ion drift model | en_US |
dc.title | Scanning transmission X-ray microscopy probe for in situ mechanism study of graphene-oxide-based resistive random access memory | en_US |
dc.type | Article | en_US |
dc.relation.volume | 21 | - |
dc.identifier.doi | 10.1107/S1600577513026696 | - |
dc.relation.page | 170-176 | - |
dc.relation.journal | JOURNAL OF SYNCHROTRON RADIATION | - |
dc.contributor.googleauthor | Wang, Jian | - |
dc.contributor.googleauthor | Choi, Sung-Yool | - |
dc.contributor.googleauthor | Nho, Hyun Woo | - |
dc.contributor.googleauthor | Kim, Jong Yun | - |
dc.contributor.googleauthor | Yoon, Tae Hyun | - |
dc.contributor.googleauthor | Choi, Sung-Yool | - |
dc.contributor.googleauthor | Wang, Jian | - |
dc.contributor.googleauthor | Shin, Hyun-Joon | - |
dc.relation.code | 2014034655 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF CHEMISTRY | - |
dc.identifier.pid | taeyoon | - |
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