Oxygen ion drift-driven dual bipolar hysteresis curves in a single Pt/Ta2O5-x/TiOxNy framework
- Title
- Oxygen ion drift-driven dual bipolar hysteresis curves in a single Pt/Ta2O5-x/TiOxNy framework
- Other Titles
- Ta2O5-x
- Author
- 박재근
- Keywords
- RESISTIVE SWITCHING MEMORIES; THIN-FILMS; DEPOSITION; MECHANISM; DEVICES; LAYER
- Issue Date
- 2013-10
- Publisher
- AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
- Citation
- Applied Physics Letters,2013,103.p183510
- Abstract
- We describe abnormal dual bipolar resistive switching events in simple Pt/Ta2O5-x/TiOxNy and Pt/Ta2O5-x/TiN matrices in which the typical switching directions (SD) are initially clockwise (CW). The negative difference region in a high resistance state before reaching the typical "CW set" process enables the SD transition to a counterclockwise direction. It thereby emphasizes the occurrence of a highly stable secondary bipolar resistive switching curve. The origin of two different switching modes is described by adapting a bias-dependent oxygen ion accumulation and depletion process at TiOxNy and TiN electrode interfaces and by performing various structural analyses. (C) 2013 AIP Publishing LLC.
- Description
- Ministry of Trade, Industry and Energy (MI, Korea)
- URI
- http://dx.doi.org/10.1063/1.4828561http://hdl.handle.net/20.500.11754/42040
- ISSN
- 0003-6951
- DOI
- 10.1063/1.4828561
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML