Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박재근 | - |
dc.date.accessioned | 2018-03-05T00:25:23Z | - |
dc.date.available | 2018-03-05T00:25:23Z | - |
dc.date.issued | 2013-10 | - |
dc.identifier.citation | Applied Physics Letters,2013,103.p183510 | en_US |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://dx.doi.org/10.1063/1.4828561 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/42040 | - |
dc.description | Ministry of Trade, Industry and Energy (MI, Korea) | en_US |
dc.description.abstract | We describe abnormal dual bipolar resistive switching events in simple Pt/Ta2O5-x/TiOxNy and Pt/Ta2O5-x/TiN matrices in which the typical switching directions (SD) are initially clockwise (CW). The negative difference region in a high resistance state before reaching the typical "CW set" process enables the SD transition to a counterclockwise direction. It thereby emphasizes the occurrence of a highly stable secondary bipolar resistive switching curve. The origin of two different switching modes is described by adapting a bias-dependent oxygen ion accumulation and depletion process at TiOxNy and TiN electrode interfaces and by performing various structural analyses. (C) 2013 AIP Publishing LLC. | en_US |
dc.description.sponsorship | Industrial Strategic Technology Development Program | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA | en_US |
dc.subject | RESISTIVE SWITCHING MEMORIES | en_US |
dc.subject | THIN-FILMS | en_US |
dc.subject | DEPOSITION | en_US |
dc.subject | MECHANISM | en_US |
dc.subject | DEVICES | en_US |
dc.subject | LAYER | en_US |
dc.title | Oxygen ion drift-driven dual bipolar hysteresis curves in a single Pt/Ta2O5-x/TiOxNy framework | en_US |
dc.title.alternative | Ta2O5-x | en_US |
dc.type | Article | en_US |
dc.relation.no | 18 | - |
dc.relation.volume | 103 | - |
dc.identifier.doi | 10.1063/1.4828561 | - |
dc.relation.page | 1-5 | - |
dc.relation.journal | APPLIED PHYSICS LETTERS | - |
dc.contributor.googleauthor | Lee, Ah Rahm | - |
dc.contributor.googleauthor | Bae, Yoon Cheol | - |
dc.contributor.googleauthor | Baek, Gwang Ho | - |
dc.contributor.googleauthor | Chung, Je Bock | - |
dc.contributor.googleauthor | Kang, Tae Sung | - |
dc.contributor.googleauthor | Lee, Jong Sun | - |
dc.contributor.googleauthor | Park, Jea-Gun | - |
dc.contributor.googleauthor | Im, Hyun Sik | - |
dc.contributor.googleauthor | Hong, Jin Pyo | - |
dc.relation.code | 2013008977 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | parkjgl | - |
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